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   <title>Form  8-K        Navitas Semiconductor     For: Mar 11</title>
   <link>http://www.streetinsider.com/SEC+Filings/Form++8-K++++++++Navitas+Semiconductor+++++For%3A+Mar+11/26146047.html</link>
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   <pubDate>Wed, 11 Mar 2026 16:08:00 -0400</pubDate>
      	<category domain="http://rss.financialcontent.com/stocksymbol">NVTS</category>
   	   	<category domain="http://rss.financialcontent.com/stocksymbol">O.49279189</category>
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   <title>Form  8-K        Navitas Semiconductor     For: Mar 11</title>
   <link>http://www.streetinsider.com/SEC+Filings/Form++8-K++++++++Navitas+Semiconductor+++++For%3A+Mar+11/26146047.html</link>
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   <pubDate>Wed, 11 Mar 2026 16:08:00 -0400</pubDate>
      	<category domain="http://rss.financialcontent.com/stocksymbol">NVTS</category>
   	   	<category domain="http://rss.financialcontent.com/stocksymbol">O.49279189</category>
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   <title>Navitas appoints Tonya Stevens as chief financial officer</title>
   <link>http://www.streetinsider.com/Management+Changes/Navitas+appoints+Tonya+Stevens+as+chief+financial+officer/26145937.html</link>
   <description>

&lt;p&gt;Navitas Semiconductor (NASDAQ: NVTS) announced the appointment of Tonya Stevens as chief financial officer, effective March 30, 2026. Stevens brings over 30 years of experience in finance and accounting within the semiconductor, technology and manufacturing sectors.&lt;/p&gt;

&lt;p&gt;Stevens joins Navitas from Lattice Semiconductor, where she served as chief accounting officer and previously as interim CFO. In these roles, she managed financial operations including SEC reporting, global accounting, tax, treasury, forecasting, internal controls and investor relations. Prior to Lattice, Stevens held senior finance leadership positions at Intel Corporation, Acumed and American Veterans Security. She began her career at PricewaterhouseCoopers.&lt;/p&gt;

&lt;p&gt;Stevens holds a bachelor's degree</description>
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   <pubDate>Wed, 11 Mar 2026 16:05:08 -0400</pubDate>
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   <title>Navitas Semiconductor Bolsters Leadership with Appointment of Tonya Stevens as Chief Financial Officer</title>
   <link>http://www.streetinsider.com/Press+Releases/Navitas+Semiconductor+Bolsters+Leadership+with+Appointment+of+Tonya+Stevens+as+Chief+Financial+Officer/26145915.html</link>
   <description>&lt;p align=&quot;center&quot;&gt;&lt;img alt=&quot;Navitas Semiconductor&quot; height=&quot;338&quot; src=&quot;https://ml.globenewswire.com/Resource/Download/354e13fa-76cc-4190-958f-6ee77cc30fba/image1.jpeg&quot; width=&quot;600&quot; data-dpi=&quot;96&quot; data-caption=&quot;Navitas Semiconductor&quot; data-filename=&quot;image1.jpeg&quot; /&gt;&lt;/p&gt;  &lt;p align=&quot;center&quot;&gt;&lt;strong&gt;&lt;em&gt;Seasoned Finance Executive Brings Over 30 Years of Expertise to Lead Financial Strategy,&lt;/em&gt;&lt;/strong&gt;&lt;br /&gt;&lt;strong&gt;&lt;em&gt;Drive Profitable Growth and Enable Scaling and Operational Excellence as Part of the Navitas 2.0 Transformation to High Power Markets&lt;/em&gt;&lt;/strong&gt;&lt;/p&gt;  &lt;p align=&quot;justify&quot;&gt;TORRANCE, Calif., March  11, 2026  (GLOBE NEWSWIRE) -- &lt;a href=&quot;https://www.globenewswire.com/Tracker?data=cnwVjALBXOOh-lnUSnPVzgIcU7fkwFs6Zl_EBI6jVrKtJGrES34-B8DkyMFy2aG6h8pq8MFCHxJ-NrEeenOE4tl-hNpO7FwPfisvasKOsjA=&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;Navitas Semiconductor&lt;/a&gt;, (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the appointment of Tonya Stevens as Chief Financial Officer (CFO), effective March 30, 2026. With more</description>
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   <pubDate>Wed, 11 Mar 2026 16:05:00 -0400</pubDate>
      	<category domain="http://rss.financialcontent.com/stocksymbol">NVTS</category>
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   <title>Navitas Semiconductor Bolsters Leadership with Appointment of Tonya Stevens as Chief Financial Officer</title>
   <link>http://www.streetinsider.com/Press+Releases/Navitas+Semiconductor+Bolsters+Leadership+with+Appointment+of+Tonya+Stevens+as+Chief+Financial+Officer/26145915.html</link>
   <description>&lt;p align=&quot;center&quot;&gt;&lt;img alt=&quot;Navitas Semiconductor&quot; height=&quot;338&quot; src=&quot;https://ml.globenewswire.com/Resource/Download/354e13fa-76cc-4190-958f-6ee77cc30fba/image1.jpeg&quot; width=&quot;600&quot; data-dpi=&quot;96&quot; data-caption=&quot;Navitas Semiconductor&quot; data-filename=&quot;image1.jpeg&quot; /&gt;&lt;/p&gt;  &lt;p align=&quot;center&quot;&gt;&lt;strong&gt;&lt;em&gt;Seasoned Finance Executive Brings Over 30 Years of Expertise to Lead Financial Strategy,&lt;/em&gt;&lt;/strong&gt;&lt;br /&gt;&lt;strong&gt;&lt;em&gt;Drive Profitable Growth and Enable Scaling and Operational Excellence as Part of the Navitas 2.0 Transformation to High Power Markets&lt;/em&gt;&lt;/strong&gt;&lt;/p&gt;  &lt;p align=&quot;justify&quot;&gt;TORRANCE, Calif., March  11, 2026  (GLOBE NEWSWIRE) -- &lt;a href=&quot;https://www.globenewswire.com/Tracker?data=cnwVjALBXOOh-lnUSnPVzgIcU7fkwFs6Zl_EBI6jVrKtJGrES34-B8DkyMFy2aG6h8pq8MFCHxJ-NrEeenOE4tl-hNpO7FwPfisvasKOsjA=&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;Navitas Semiconductor&lt;/a&gt;, (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the appointment of Tonya Stevens as Chief Financial Officer (CFO), effective March 30, 2026. With more</description>
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   <pubDate>Wed, 11 Mar 2026 16:05:00 -0400</pubDate>
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   <title>Navitas Semiconductor Bolsters Leadership with Appointment of Tonya Stevens as Chief Financial Officer</title>
   <link>http://www.streetinsider.com/Globe+Newswire/Navitas+Semiconductor+Bolsters+Leadership+with+Appointment+of+Tonya+Stevens+as+Chief+Financial+Officer/26145915.html</link>
   <description>&lt;p align=&quot;center&quot;&gt;&lt;img alt=&quot;Navitas Semiconductor&quot; height=&quot;338&quot; src=&quot;https://ml.globenewswire.com/Resource/Download/354e13fa-76cc-4190-958f-6ee77cc30fba/image1.jpeg&quot; width=&quot;600&quot; data-dpi=&quot;96&quot; data-caption=&quot;Navitas Semiconductor&quot; data-filename=&quot;image1.jpeg&quot; /&gt;&lt;/p&gt;  &lt;p align=&quot;center&quot;&gt;&lt;strong&gt;&lt;em&gt;Seasoned Finance Executive Brings Over 30 Years of Expertise to Lead Financial Strategy,&lt;/em&gt;&lt;/strong&gt;&lt;br /&gt;&lt;strong&gt;&lt;em&gt;Drive Profitable Growth and Enable Scaling and Operational Excellence as Part of the Navitas 2.0 Transformation to High Power Markets&lt;/em&gt;&lt;/strong&gt;&lt;/p&gt;  &lt;p align=&quot;justify&quot;&gt;TORRANCE, Calif., March  11, 2026  (GLOBE NEWSWIRE) -- &lt;a href=&quot;https://www.globenewswire.com/Tracker?data=cnwVjALBXOOh-lnUSnPVzgIcU7fkwFs6Zl_EBI6jVrKtJGrES34-B8DkyMFy2aG6h8pq8MFCHxJ-NrEeenOE4tl-hNpO7FwPfisvasKOsjA=&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;Navitas Semiconductor&lt;/a&gt;, (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the appointment of Tonya Stevens as Chief Financial Officer (CFO), effective March 30, 2026. With more</description>
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   <pubDate>Wed, 11 Mar 2026 16:05:00 -0400</pubDate>
      	<category domain="http://rss.financialcontent.com/stocksymbol">NVTS</category>
   	   	<category domain="http://rss.financialcontent.com/stocksymbol">NVTS</category>
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   <title>Navitas Semiconductor Bolsters Leadership with Appointment of Tonya Stevens as Chief Financial Officer</title>
   <link>http://www.streetinsider.com/Globe+Newswire/Navitas+Semiconductor+Bolsters+Leadership+with+Appointment+of+Tonya+Stevens+as+Chief+Financial+Officer/26145915.html</link>
   <description>&lt;p align=&quot;center&quot;&gt;&lt;img alt=&quot;Navitas Semiconductor&quot; height=&quot;338&quot; src=&quot;https://ml.globenewswire.com/Resource/Download/354e13fa-76cc-4190-958f-6ee77cc30fba/image1.jpeg&quot; width=&quot;600&quot; data-dpi=&quot;96&quot; data-caption=&quot;Navitas Semiconductor&quot; data-filename=&quot;image1.jpeg&quot; /&gt;&lt;/p&gt;  &lt;p align=&quot;center&quot;&gt;&lt;strong&gt;&lt;em&gt;Seasoned Finance Executive Brings Over 30 Years of Expertise to Lead Financial Strategy,&lt;/em&gt;&lt;/strong&gt;&lt;br /&gt;&lt;strong&gt;&lt;em&gt;Drive Profitable Growth and Enable Scaling and Operational Excellence as Part of the Navitas 2.0 Transformation to High Power Markets&lt;/em&gt;&lt;/strong&gt;&lt;/p&gt;  &lt;p align=&quot;justify&quot;&gt;TORRANCE, Calif., March  11, 2026  (GLOBE NEWSWIRE) -- &lt;a href=&quot;https://www.globenewswire.com/Tracker?data=cnwVjALBXOOh-lnUSnPVzgIcU7fkwFs6Zl_EBI6jVrKtJGrES34-B8DkyMFy2aG6h8pq8MFCHxJ-NrEeenOE4tl-hNpO7FwPfisvasKOsjA=&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;Navitas Semiconductor&lt;/a&gt;, (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the appointment of Tonya Stevens as Chief Financial Officer (CFO), effective March 30, 2026. With more</description>
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   <pubDate>Wed, 11 Mar 2026 16:05:00 -0400</pubDate>
      	<category domain="http://rss.financialcontent.com/stocksymbol">NVTS</category>
   	   	<category domain="http://rss.financialcontent.com/stocksymbol">NVTS</category>
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   <title>Navitas Semiconductor (NVTS) stock surges 20% on new SiC product launch</title>
   <link>http://www.streetinsider.com/Investing/Navitas+Semiconductor+%28NVTS%29+stock+surges+20%25+on+new+SiC+product+launch/26144722.html</link>
   <description>&lt;p&gt;Investing.com -- Navitas Semiconductor (NASDAQ:NVTS) shares jumped 20% following the company's announcement of two new silicon carbide MOSFET packages designed for AI data centers and energy infrastructure applications.&lt;/p&gt;&lt;p&gt;The company launched a top-side cooled QDPAK and a low-profile TO-247-4L package using its 5th generation GeneSiC Trench-Assisted Planar SiC MOSFET technology platform. Both products feature 1200 V voltage ratings and are targeted at high-power density applications.&lt;/p&gt;&lt;p&gt;The 5th generation technology delivers 35% improvements in RDS,ON × QGD figure of merit and approximately 25% improvement in QGD/QGS ratio compared to previous generations. The technology includes a threshold voltage of greater than 3 V to</description>
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   <pubDate>Wed, 11 Mar 2026 12:01:17 -0400</pubDate>
      	<category domain="http://rss.financialcontent.com/stocksymbol">NVTS</category>
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   <title>Navitas Semiconductor (NVTS) stock surges 20% on new SiC product launch</title>
   <link>http://www.streetinsider.com/Momentum+Movers/Navitas+Semiconductor+%28NVTS%29+stock+surges+20%25+on+new+SiC+product+launch/26144722.html</link>
   <description>&lt;p&gt;Investing.com -- Navitas Semiconductor (NASDAQ:NVTS) shares jumped 20% following the company's announcement of two new silicon carbide MOSFET packages designed for AI data centers and energy infrastructure applications.&lt;/p&gt;&lt;p&gt;The company launched a top-side cooled QDPAK and a low-profile TO-247-4L package using its 5th generation GeneSiC Trench-Assisted Planar SiC MOSFET technology platform. Both products feature 1200 V voltage ratings and are targeted at high-power density applications.&lt;/p&gt;&lt;p&gt;The 5th generation technology delivers 35% improvements in RDS,ON × QGD figure of merit and approximately 25% improvement in QGD/QGS ratio compared to previous generations. The technology includes a threshold voltage of greater than 3 V to</description>
   <guid isPermaLink="true">http://www.streetinsider.com/Momentum+Movers/Navitas+Semiconductor+%28NVTS%29+stock+surges+20%25+on+new+SiC+product+launch/26144722.html</guid>
   <pubDate>Wed, 11 Mar 2026 12:01:17 -0400</pubDate>
      	<category domain="http://rss.financialcontent.com/stocksymbol">NVTS</category>
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   <title>Navitas Adds Top-Side Cooled QDPAK and Low-Profile TO-247-4L to its Package Line-Up in the Latest 5th Generation GeneSiC™ Technology</title>
   <link>http://www.streetinsider.com/Press+Releases/Navitas+Adds+Top-Side+Cooled+QDPAK+and+Low-Profile+TO-247-4L+to+its+Package+Line-Up+in+the+Latest+5th+Generation+GeneSiC%E2%84%A2+Technology/26143096.html</link>
   <description>&lt;p&gt;&lt;strong&gt;QDPAK and Low-profile TO247 in the latest GeneSiC™ 5th Generation Trench-Assisted Planar SiC MOSFET technology deliver significant improvements in performance and lifetime for AI data centers, grid and energy infrastructure, and industrial electrification with voltage ratings of 1200 V&lt;/strong&gt;&lt;/p&gt;&lt;p align=&quot;left&quot;&gt;TORRANCE, Calif., March  11, 2026  (GLOBE NEWSWIRE) -- &lt;a href=&quot;https://www.globenewswire.com/Tracker?data=vXPvU7RyJeRgO8WCAVtDZqIVQJkPcjD8puj1BNFD2NTCFVUVsLqEtvNNjb5OvRzY-XH5KpO8XLxuB5EErfcm9yvZMrfgadDvlLctX1iXL44=&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;&lt;u&gt;Navitas Semiconductor&lt;/u&gt;&lt;/a&gt; (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the launch of two new packages: top-side cooled QDPAK and a low-profile TO-247-4L with asymmetrical leads in its &lt;a href=&quot;https://www.globenewswire.com/Tracker?data=2V7rc6T1neFTOCr4ihl4QltH-IgF_XkNuQYCxJukfJoPvbCvGsLGIs1ttFTxUcP2bbuxqQSwBTRM4P90C1RozURRyKIKFsU7cUkERXmgHADYyjjHDovGgo_cuPOAjmWdyJiPIq1YawQ9j2as_rN2wMZmpU26DDUxrWtKIeNn9kLeinXMupYuU8X_xLKdAtiKR-jl2H2qymuehE6miGJJubPkmEhaXNZ_o-x7qQ5UH5U=&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;5&lt;sup&gt;th&lt;/sup&gt; generation GeneSiC™ technology platform&lt;/a&gt;.</description>
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   <pubDate>Wed, 11 Mar 2026 08:30:00 -0400</pubDate>
      	<category domain="http://rss.financialcontent.com/stocksymbol">NVTS</category>
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   <title>Navitas Adds Top-Side Cooled QDPAK and Low-Profile TO-247-4L to its Package Line-Up in the Latest 5th Generation GeneSiC™ Technology</title>
   <link>http://www.streetinsider.com/Press+Releases/Navitas+Adds+Top-Side+Cooled+QDPAK+and+Low-Profile+TO-247-4L+to+its+Package+Line-Up+in+the+Latest+5th+Generation+GeneSiC%E2%84%A2+Technology/26143096.html</link>
   <description>&lt;p&gt;&lt;strong&gt;QDPAK and Low-profile TO247 in the latest GeneSiC™ 5th Generation Trench-Assisted Planar SiC MOSFET technology deliver significant improvements in performance and lifetime for AI data centers, grid and energy infrastructure, and industrial electrification with voltage ratings of 1200 V&lt;/strong&gt;&lt;/p&gt;&lt;p align=&quot;left&quot;&gt;TORRANCE, Calif., March  11, 2026  (GLOBE NEWSWIRE) -- &lt;a href=&quot;https://www.globenewswire.com/Tracker?data=vXPvU7RyJeRgO8WCAVtDZqIVQJkPcjD8puj1BNFD2NTCFVUVsLqEtvNNjb5OvRzY-XH5KpO8XLxuB5EErfcm9yvZMrfgadDvlLctX1iXL44=&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;&lt;u&gt;Navitas Semiconductor&lt;/u&gt;&lt;/a&gt; (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the launch of two new packages: top-side cooled QDPAK and a low-profile TO-247-4L with asymmetrical leads in its &lt;a href=&quot;https://www.globenewswire.com/Tracker?data=2V7rc6T1neFTOCr4ihl4QltH-IgF_XkNuQYCxJukfJoPvbCvGsLGIs1ttFTxUcP2bbuxqQSwBTRM4P90C1RozURRyKIKFsU7cUkERXmgHADYyjjHDovGgo_cuPOAjmWdyJiPIq1YawQ9j2as_rN2wMZmpU26DDUxrWtKIeNn9kLeinXMupYuU8X_xLKdAtiKR-jl2H2qymuehE6miGJJubPkmEhaXNZ_o-x7qQ5UH5U=&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;5&lt;sup&gt;th&lt;/sup&gt; generation GeneSiC™ technology platform&lt;/a&gt;.</description>
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   <pubDate>Wed, 11 Mar 2026 08:30:00 -0400</pubDate>
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   <title>Navitas Adds Top-Side Cooled QDPAK and Low-Profile TO-247-4L to its Package Line-Up in the Latest 5th Generation GeneSiC™ Technology</title>
   <link>http://www.streetinsider.com/Globe+Newswire/Navitas+Adds+Top-Side+Cooled+QDPAK+and+Low-Profile+TO-247-4L+to+its+Package+Line-Up+in+the+Latest+5th+Generation+GeneSiC%E2%84%A2+Technology/26143096.html</link>
   <description>&lt;p&gt;&lt;strong&gt;QDPAK and Low-profile TO247 in the latest GeneSiC™ 5th Generation Trench-Assisted Planar SiC MOSFET technology deliver significant improvements in performance and lifetime for AI data centers, grid and energy infrastructure, and industrial electrification with voltage ratings of 1200 V&lt;/strong&gt;&lt;/p&gt;&lt;p align=&quot;left&quot;&gt;TORRANCE, Calif., March  11, 2026  (GLOBE NEWSWIRE) -- &lt;a href=&quot;https://www.globenewswire.com/Tracker?data=vXPvU7RyJeRgO8WCAVtDZqIVQJkPcjD8puj1BNFD2NTCFVUVsLqEtvNNjb5OvRzY-XH5KpO8XLxuB5EErfcm9yvZMrfgadDvlLctX1iXL44=&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;&lt;u&gt;Navitas Semiconductor&lt;/u&gt;&lt;/a&gt; (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the launch of two new packages: top-side cooled QDPAK and a low-profile TO-247-4L with asymmetrical leads in its &lt;a href=&quot;https://www.globenewswire.com/Tracker?data=2V7rc6T1neFTOCr4ihl4QltH-IgF_XkNuQYCxJukfJoPvbCvGsLGIs1ttFTxUcP2bbuxqQSwBTRM4P90C1RozURRyKIKFsU7cUkERXmgHADYyjjHDovGgo_cuPOAjmWdyJiPIq1YawQ9j2as_rN2wMZmpU26DDUxrWtKIeNn9kLeinXMupYuU8X_xLKdAtiKR-jl2H2qymuehE6miGJJubPkmEhaXNZ_o-x7qQ5UH5U=&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;5&lt;sup&gt;th&lt;/sup&gt; generation GeneSiC™ technology platform&lt;/a&gt;.</description>
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   <pubDate>Wed, 11 Mar 2026 08:30:00 -0400</pubDate>
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   <title>Navitas Adds Top-Side Cooled QDPAK and Low-Profile TO-247-4L to its Package Line-Up in the Latest 5th Generation GeneSiC™ Technology</title>
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   <description>&lt;p&gt;&lt;strong&gt;QDPAK and Low-profile TO247 in the latest GeneSiC™ 5th Generation Trench-Assisted Planar SiC MOSFET technology deliver significant improvements in performance and lifetime for AI data centers, grid and energy infrastructure, and industrial electrification with voltage ratings of 1200 V&lt;/strong&gt;&lt;/p&gt;&lt;p align=&quot;left&quot;&gt;TORRANCE, Calif., March  11, 2026  (GLOBE NEWSWIRE) -- &lt;a href=&quot;https://www.globenewswire.com/Tracker?data=vXPvU7RyJeRgO8WCAVtDZqIVQJkPcjD8puj1BNFD2NTCFVUVsLqEtvNNjb5OvRzY-XH5KpO8XLxuB5EErfcm9yvZMrfgadDvlLctX1iXL44=&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;&lt;u&gt;Navitas Semiconductor&lt;/u&gt;&lt;/a&gt; (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the launch of two new packages: top-side cooled QDPAK and a low-profile TO-247-4L with asymmetrical leads in its &lt;a href=&quot;https://www.globenewswire.com/Tracker?data=2V7rc6T1neFTOCr4ihl4QltH-IgF_XkNuQYCxJukfJoPvbCvGsLGIs1ttFTxUcP2bbuxqQSwBTRM4P90C1RozURRyKIKFsU7cUkERXmgHADYyjjHDovGgo_cuPOAjmWdyJiPIq1YawQ9j2as_rN2wMZmpU26DDUxrWtKIeNn9kLeinXMupYuU8X_xLKdAtiKR-jl2H2qymuehE6miGJJubPkmEhaXNZ_o-x7qQ5UH5U=&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;5&lt;sup&gt;th&lt;/sup&gt; generation GeneSiC™ technology platform&lt;/a&gt;.</description>
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   <pubDate>Wed, 11 Mar 2026 08:30:00 -0400</pubDate>
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   <title>Form  4          Navitas Semiconductor     For: Mar 03  Filed by: Allexandre Chris</title>
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   <pubDate>Thu, 05 Mar 2026 18:59:00 -0400</pubDate>
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   <title>Form  4          Navitas Semiconductor     For: Mar 03  Filed by: Allexandre Chris</title>
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   <pubDate>Thu, 05 Mar 2026 18:59:00 -0400</pubDate>
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   <title> Navitas, EPFL to Demonstrate Novel Solid-State Transformer Solution for AI Data Center, Enabling 800 V DC Implementation</title>
   <link>http://www.streetinsider.com/Press+Releases/+Navitas%2C+EPFL+to+Demonstrate+Novel+Solid-State+Transformer+Solution+for+AI+Data+Center%2C+Enabling+800%C2%A0V+DC+Implementation/26107670.html</link>
   <description>&lt;p&gt;&lt;strong&gt;First systems developed by EPFL featuring GeneSiC™ 3300V and 1200V SiC devices showcase the strength of Navitas’ Grid and Energy infrastructure portfolio, accelerating the adoption of 800V DC AI data centers.&lt;/strong&gt;&lt;/p&gt;&lt;p align=&quot;left&quot;&gt;TORRANCE, Calif. and LAUSANNE, Switzerland, March  04, 2026  (GLOBE NEWSWIRE) -- &lt;a href=&quot;https://www.globenewswire.com/Tracker?data=bhluJzEcoMEcZ53LE1JaRaIMbIBkVSR0yGc_i5hJcYYU81aApnCzqjFGLIXhAhAyH7PTFsrmCpT6gCjr_xwM5OhytrOltJbPHXI-bwRJnlc=&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;&lt;u&gt;Navitas Semiconductor&lt;/u&gt;&lt;/a&gt; (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, and École Polytechnique Fédérale de Lausanne (EPFL), Europe’s most cosmopolitan technical university, announced exhibition of a 250kW SST solution at &lt;a href=&quot;https://www.globenewswire.com/Tracker?data=7HK9cG9jtOScWxQb6Ti64kDzQrDTuM8Jiy6IZsEEe-oNOFIhVVPMxs49Nr5V9tMXBuaVaMDLuwqfttLakrR0OJKtGmlXW_uFnoykwBpzRWwB7M7uXqhpxK_sITUjusTSqRCLgnQhXbLY5LV2oFU_BA==&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;APEC 2026 in San Antonio Texas.&lt;/a&gt;&lt;/p&gt;    &lt;p align=&quot;justify&quot;&gt;The Solid-State</description>
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   <pubDate>Wed, 04 Mar 2026 08:30:00 -0400</pubDate>
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   <title> Navitas, EPFL to Demonstrate Novel Solid-State Transformer Solution for AI Data Center, Enabling 800 V DC Implementation</title>
   <link>http://www.streetinsider.com/Press+Releases/+Navitas%2C+EPFL+to+Demonstrate+Novel+Solid-State+Transformer+Solution+for+AI+Data+Center%2C+Enabling+800%C2%A0V+DC+Implementation/26107670.html</link>
   <description>&lt;p&gt;&lt;strong&gt;First systems developed by EPFL featuring GeneSiC™ 3300V and 1200V SiC devices showcase the strength of Navitas’ Grid and Energy infrastructure portfolio, accelerating the adoption of 800V DC AI data centers.&lt;/strong&gt;&lt;/p&gt;&lt;p align=&quot;left&quot;&gt;TORRANCE, Calif. and LAUSANNE, Switzerland, March  04, 2026  (GLOBE NEWSWIRE) -- &lt;a href=&quot;https://www.globenewswire.com/Tracker?data=bhluJzEcoMEcZ53LE1JaRaIMbIBkVSR0yGc_i5hJcYYU81aApnCzqjFGLIXhAhAyH7PTFsrmCpT6gCjr_xwM5OhytrOltJbPHXI-bwRJnlc=&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;&lt;u&gt;Navitas Semiconductor&lt;/u&gt;&lt;/a&gt; (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, and École Polytechnique Fédérale de Lausanne (EPFL), Europe’s most cosmopolitan technical university, announced exhibition of a 250kW SST solution at &lt;a href=&quot;https://www.globenewswire.com/Tracker?data=7HK9cG9jtOScWxQb6Ti64kDzQrDTuM8Jiy6IZsEEe-oNOFIhVVPMxs49Nr5V9tMXBuaVaMDLuwqfttLakrR0OJKtGmlXW_uFnoykwBpzRWwB7M7uXqhpxK_sITUjusTSqRCLgnQhXbLY5LV2oFU_BA==&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;APEC 2026 in San Antonio Texas.&lt;/a&gt;&lt;/p&gt;    &lt;p align=&quot;justify&quot;&gt;The Solid-State</description>
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   <pubDate>Wed, 04 Mar 2026 08:30:00 -0400</pubDate>
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   <title> Navitas, EPFL to Demonstrate Novel Solid-State Transformer Solution for AI Data Center, Enabling 800 V DC Implementation</title>
   <link>http://www.streetinsider.com/Globe+Newswire/+Navitas%2C+EPFL+to+Demonstrate+Novel+Solid-State+Transformer+Solution+for+AI+Data+Center%2C+Enabling+800%C2%A0V+DC+Implementation/26107670.html</link>
   <description>&lt;p&gt;&lt;strong&gt;First systems developed by EPFL featuring GeneSiC™ 3300V and 1200V SiC devices showcase the strength of Navitas’ Grid and Energy infrastructure portfolio, accelerating the adoption of 800V DC AI data centers.&lt;/strong&gt;&lt;/p&gt;&lt;p align=&quot;left&quot;&gt;TORRANCE, Calif. and LAUSANNE, Switzerland, March  04, 2026  (GLOBE NEWSWIRE) -- &lt;a href=&quot;https://www.globenewswire.com/Tracker?data=bhluJzEcoMEcZ53LE1JaRaIMbIBkVSR0yGc_i5hJcYYU81aApnCzqjFGLIXhAhAyH7PTFsrmCpT6gCjr_xwM5OhytrOltJbPHXI-bwRJnlc=&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;&lt;u&gt;Navitas Semiconductor&lt;/u&gt;&lt;/a&gt; (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, and École Polytechnique Fédérale de Lausanne (EPFL), Europe’s most cosmopolitan technical university, announced exhibition of a 250kW SST solution at &lt;a href=&quot;https://www.globenewswire.com/Tracker?data=7HK9cG9jtOScWxQb6Ti64kDzQrDTuM8Jiy6IZsEEe-oNOFIhVVPMxs49Nr5V9tMXBuaVaMDLuwqfttLakrR0OJKtGmlXW_uFnoykwBpzRWwB7M7uXqhpxK_sITUjusTSqRCLgnQhXbLY5LV2oFU_BA==&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;APEC 2026 in San Antonio Texas.&lt;/a&gt;&lt;/p&gt;    &lt;p align=&quot;justify&quot;&gt;The Solid-State</description>
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   <title> Navitas, EPFL to Demonstrate Novel Solid-State Transformer Solution for AI Data Center, Enabling 800 V DC Implementation</title>
   <link>http://www.streetinsider.com/Globe+Newswire/+Navitas%2C+EPFL+to+Demonstrate+Novel+Solid-State+Transformer+Solution+for+AI+Data+Center%2C+Enabling+800%C2%A0V+DC+Implementation/26107670.html</link>
   <description>&lt;p&gt;&lt;strong&gt;First systems developed by EPFL featuring GeneSiC™ 3300V and 1200V SiC devices showcase the strength of Navitas’ Grid and Energy infrastructure portfolio, accelerating the adoption of 800V DC AI data centers.&lt;/strong&gt;&lt;/p&gt;&lt;p align=&quot;left&quot;&gt;TORRANCE, Calif. and LAUSANNE, Switzerland, March  04, 2026  (GLOBE NEWSWIRE) -- &lt;a href=&quot;https://www.globenewswire.com/Tracker?data=bhluJzEcoMEcZ53LE1JaRaIMbIBkVSR0yGc_i5hJcYYU81aApnCzqjFGLIXhAhAyH7PTFsrmCpT6gCjr_xwM5OhytrOltJbPHXI-bwRJnlc=&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;&lt;u&gt;Navitas Semiconductor&lt;/u&gt;&lt;/a&gt; (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, and École Polytechnique Fédérale de Lausanne (EPFL), Europe’s most cosmopolitan technical university, announced exhibition of a 250kW SST solution at &lt;a href=&quot;https://www.globenewswire.com/Tracker?data=7HK9cG9jtOScWxQb6Ti64kDzQrDTuM8Jiy6IZsEEe-oNOFIhVVPMxs49Nr5V9tMXBuaVaMDLuwqfttLakrR0OJKtGmlXW_uFnoykwBpzRWwB7M7uXqhpxK_sITUjusTSqRCLgnQhXbLY5LV2oFU_BA==&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;APEC 2026 in San Antonio Texas.&lt;/a&gt;&lt;/p&gt;    &lt;p align=&quot;justify&quot;&gt;The Solid-State</description>
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   <title>Navitas, EPFL to Demonstrate Novel Solid-State Transformer Solution for AI Data Center, Enabling 800 V DC Implementation</title>
   <link>http://www.streetinsider.com/Press+Releases/Navitas%2C+EPFL+to+Demonstrate+Novel+Solid-State+Transformer+Solution+for+AI+Data+Center%2C+Enabling+800%C2%A0V+DC+Implementation/26107708.html</link>
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&lt;p align=&quot;left&quot;&gt;TORRANCE, Calif. and LAUSANNE, Switzerland, March  04, 2026  (GLOBE NEWSWIRE) -- &lt;a target=&quot;_blank&quot; href=&quot;https://www.globenewswire.com/Tracker?data=bhluJzEcoMEcZ53LE1JaRaIMbIBkVSR0yGc_i5hJcYYU81aApnCzqjFGLIXhAhAyH7PTFsrmCpT6gCjr_xwM5OhytrOltJbPHXI-bwRJnlc=&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;Navitas Semiconductor&lt;/a&gt; (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, and École Polytechnique Fédérale de Lausanne (EPFL), Europe’s most cosmopolitan technical university, announced exhibition of a 250kW SST solution at &lt;a target=&quot;_blank&quot; href=&quot;https://www.globenewswire.com/Tracker?data=7HK9cG9jtOScWxQb6Ti64kDzQrDTuM8Jiy6IZsEEe-oNOFIhVVPMxs49Nr5V9tMXBuaVaMDLuwqfttLakrR0OJKtGmlXW_uFnoykwBpzRWwB7M7uXqhpxK_sITUjusTSqRCLgnQhXbLY5LV2oFU_BA==&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;APEC 2026 in San Antonio Texas.&lt;/a&gt;&lt;/p&gt;    &lt;p align=&quot;justify&quot;&gt;The Solid-State Transformer (SST) platform developed by the Power Electronics Laboratory of EPFL enables the grid architecture required by next-generation data centers, eliminating bulky low-frequency transformers while improving end-to-end efficiency.</description>
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   <title>Navitas, EPFL to Demonstrate Novel Solid-State Transformer Solution for AI Data Center, Enabling 800 V DC Implementation</title>
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&lt;p align=&quot;left&quot;&gt;TORRANCE, Calif. and LAUSANNE, Switzerland, March  04, 2026  (GLOBE NEWSWIRE) -- &lt;a target=&quot;_blank&quot; href=&quot;https://www.globenewswire.com/Tracker?data=bhluJzEcoMEcZ53LE1JaRaIMbIBkVSR0yGc_i5hJcYYU81aApnCzqjFGLIXhAhAyH7PTFsrmCpT6gCjr_xwM5OhytrOltJbPHXI-bwRJnlc=&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;Navitas Semiconductor&lt;/a&gt; (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, and École Polytechnique Fédérale de Lausanne (EPFL), Europe’s most cosmopolitan technical university, announced exhibition of a 250kW SST solution at &lt;a target=&quot;_blank&quot; href=&quot;https://www.globenewswire.com/Tracker?data=7HK9cG9jtOScWxQb6Ti64kDzQrDTuM8Jiy6IZsEEe-oNOFIhVVPMxs49Nr5V9tMXBuaVaMDLuwqfttLakrR0OJKtGmlXW_uFnoykwBpzRWwB7M7uXqhpxK_sITUjusTSqRCLgnQhXbLY5LV2oFU_BA==&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;APEC 2026 in San Antonio Texas.&lt;/a&gt;&lt;/p&gt;    &lt;p align=&quot;justify&quot;&gt;The Solid-State Transformer (SST) platform developed by the Power Electronics Laboratory of EPFL enables the grid architecture required by next-generation data centers, eliminating bulky low-frequency transformers while improving end-to-end efficiency.</description>
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   <title>Navitas, EPFL to Demonstrate Novel Solid-State Transformer Solution for AI Data Center, Enabling 800 V DC Implementation</title>
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&lt;p align=&quot;left&quot;&gt;TORRANCE, Calif. and LAUSANNE, Switzerland, March  04, 2026  (GLOBE NEWSWIRE) -- &lt;a target=&quot;_blank&quot; href=&quot;https://www.globenewswire.com/Tracker?data=bhluJzEcoMEcZ53LE1JaRaIMbIBkVSR0yGc_i5hJcYYU81aApnCzqjFGLIXhAhAyH7PTFsrmCpT6gCjr_xwM5OhytrOltJbPHXI-bwRJnlc=&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;Navitas Semiconductor&lt;/a&gt; (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, and École Polytechnique Fédérale de Lausanne (EPFL), Europe’s most cosmopolitan technical university, announced exhibition of a 250kW SST solution at &lt;a target=&quot;_blank&quot; href=&quot;https://www.globenewswire.com/Tracker?data=7HK9cG9jtOScWxQb6Ti64kDzQrDTuM8Jiy6IZsEEe-oNOFIhVVPMxs49Nr5V9tMXBuaVaMDLuwqfttLakrR0OJKtGmlXW_uFnoykwBpzRWwB7M7uXqhpxK_sITUjusTSqRCLgnQhXbLY5LV2oFU_BA==&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;APEC 2026 in San Antonio Texas.&lt;/a&gt;&lt;/p&gt;    &lt;p align=&quot;justify&quot;&gt;The Solid-State Transformer (SST) platform developed by the Power Electronics Laboratory of EPFL enables the grid architecture required by next-generation data centers, eliminating bulky low-frequency transformers while improving end-to-end efficiency.</description>
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   <title>Navitas, EPFL to Demonstrate Novel Solid-State Transformer Solution for AI Data Center, Enabling 800 V DC Implementation</title>
   <link>http://www.streetinsider.com/Press+Releases/Navitas%2C+EPFL+to+Demonstrate+Novel+Solid-State+Transformer+Solution+for+AI+Data+Center%2C+Enabling+800%C2%A0V+DC+Implementation/26107708.html</link>
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&lt;p align=&quot;left&quot;&gt;TORRANCE, Calif. and LAUSANNE, Switzerland, March  04, 2026  (GLOBE NEWSWIRE) -- &lt;a target=&quot;_blank&quot; href=&quot;https://www.globenewswire.com/Tracker?data=bhluJzEcoMEcZ53LE1JaRaIMbIBkVSR0yGc_i5hJcYYU81aApnCzqjFGLIXhAhAyH7PTFsrmCpT6gCjr_xwM5OhytrOltJbPHXI-bwRJnlc=&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;Navitas Semiconductor&lt;/a&gt; (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, and École Polytechnique Fédérale de Lausanne (EPFL), Europe’s most cosmopolitan technical university, announced exhibition of a 250kW SST solution at &lt;a target=&quot;_blank&quot; href=&quot;https://www.globenewswire.com/Tracker?data=7HK9cG9jtOScWxQb6Ti64kDzQrDTuM8Jiy6IZsEEe-oNOFIhVVPMxs49Nr5V9tMXBuaVaMDLuwqfttLakrR0OJKtGmlXW_uFnoykwBpzRWwB7M7uXqhpxK_sITUjusTSqRCLgnQhXbLY5LV2oFU_BA==&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;APEC 2026 in San Antonio Texas.&lt;/a&gt;&lt;/p&gt;    &lt;p align=&quot;justify&quot;&gt;The Solid-State Transformer (SST) platform developed by the Power Electronics Laboratory of EPFL enables the grid architecture required by next-generation data centers, eliminating bulky low-frequency transformers while improving end-to-end efficiency.</description>
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   <pubDate>Wed, 04 Mar 2026 08:30:00 -0400</pubDate>
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   <title>Navitas, EPFL to Demonstrate Novel Solid-State Transformer Solution for AI Data Center, Enabling 800 V DC Implementation</title>
   <link>http://www.streetinsider.com/Press+Releases/Navitas%2C+EPFL+to+Demonstrate+Novel+Solid-State+Transformer+Solution+for+AI+Data+Center%2C+Enabling+800%C2%A0V+DC+Implementation/26107708.html</link>
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&lt;p align=&quot;left&quot;&gt;TORRANCE, Calif. and LAUSANNE, Switzerland, March  04, 2026  (GLOBE NEWSWIRE) -- &lt;a target=&quot;_blank&quot; href=&quot;https://www.globenewswire.com/Tracker?data=bhluJzEcoMEcZ53LE1JaRaIMbIBkVSR0yGc_i5hJcYYU81aApnCzqjFGLIXhAhAyH7PTFsrmCpT6gCjr_xwM5OhytrOltJbPHXI-bwRJnlc=&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;Navitas Semiconductor&lt;/a&gt; (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, and École Polytechnique Fédérale de Lausanne (EPFL), Europe’s most cosmopolitan technical university, announced exhibition of a 250kW SST solution at &lt;a target=&quot;_blank&quot; href=&quot;https://www.globenewswire.com/Tracker?data=7HK9cG9jtOScWxQb6Ti64kDzQrDTuM8Jiy6IZsEEe-oNOFIhVVPMxs49Nr5V9tMXBuaVaMDLuwqfttLakrR0OJKtGmlXW_uFnoykwBpzRWwB7M7uXqhpxK_sITUjusTSqRCLgnQhXbLY5LV2oFU_BA==&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;APEC 2026 in San Antonio Texas.&lt;/a&gt;&lt;/p&gt;    &lt;p align=&quot;justify&quot;&gt;The Solid-State Transformer (SST) platform developed by the Power Electronics Laboratory of EPFL enables the grid architecture required by next-generation data centers, eliminating bulky low-frequency transformers while improving end-to-end efficiency.</description>
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   <title>Navitas, EPFL to Demonstrate Novel Solid-State Transformer Solution for AI Data Center, Enabling 800 V DC Implementation</title>
   <link>http://www.streetinsider.com/Press+Releases/Navitas%2C+EPFL+to+Demonstrate+Novel+Solid-State+Transformer+Solution+for+AI+Data+Center%2C+Enabling+800%C2%A0V+DC+Implementation/26107708.html</link>
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&lt;p align=&quot;left&quot;&gt;TORRANCE, Calif. and LAUSANNE, Switzerland, March  04, 2026  (GLOBE NEWSWIRE) -- &lt;a target=&quot;_blank&quot; href=&quot;https://www.globenewswire.com/Tracker?data=bhluJzEcoMEcZ53LE1JaRaIMbIBkVSR0yGc_i5hJcYYU81aApnCzqjFGLIXhAhAyH7PTFsrmCpT6gCjr_xwM5OhytrOltJbPHXI-bwRJnlc=&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;Navitas Semiconductor&lt;/a&gt; (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, and École Polytechnique Fédérale de Lausanne (EPFL), Europe’s most cosmopolitan technical university, announced exhibition of a 250kW SST solution at &lt;a target=&quot;_blank&quot; href=&quot;https://www.globenewswire.com/Tracker?data=7HK9cG9jtOScWxQb6Ti64kDzQrDTuM8Jiy6IZsEEe-oNOFIhVVPMxs49Nr5V9tMXBuaVaMDLuwqfttLakrR0OJKtGmlXW_uFnoykwBpzRWwB7M7uXqhpxK_sITUjusTSqRCLgnQhXbLY5LV2oFU_BA==&quot; rel=&quot;nofollow&quot; target=&quot;_blank&quot;&gt;APEC 2026 in San Antonio Texas.&lt;/a&gt;&lt;/p&gt;    &lt;p align=&quot;justify&quot;&gt;The Solid-State Transformer (SST) platform developed by the Power Electronics Laboratory of EPFL enables the grid architecture required by next-generation data centers, eliminating bulky low-frequency transformers while improving end-to-end efficiency.</description>
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