SolarEdge Technologies (NASDAQ: SEDG) and Infineon Technologies (FSE: IFX / OTCQX: IFNNY) announced an extension of their collaboration to develop solid-state circuit breaker (SSCB) technology for high-voltage DC distribution in AI and hyperscale data centers, according to a press release.

The expanded partnership focuses on the distribution layer between the solid-state transformer (SST) and the compute rack. SolarEdge is leading the design of the SSCB solution, while Infineon is contributing its silicon carbide (SiC) JFET technology for use in the protection devices.

The collaboration builds on an initial agreement first announced in November 2025, which centered on SolarEdge's SST platform using Infineon SiC components. The SST is designed to enable direct medium-voltage conversion — ranging from 13.8 to 34.5 kV — to 800–1,500 VDC at over 99% efficiency.

SSCBs are designed to interrupt electrical faults within a few microseconds without mechanical contacts. The technology targets a challenge specific to DC systems: unlike AC systems, DC current lacks a natural zero crossing, which makes mechanical circuit interruption more difficult due to arcing.

"High-density AI infrastructure at 800 VDC demands uncompromising efficiency and protection," said Shuki Nir, Chief Executive Officer of SolarEdge. "Solid-state protection will enable operators to achieve both, delivering ultra-fast and dependable fault isolation without sacrificing conversion performance."

"By combining our advanced silicon carbide JFET technology with SolarEdge's expertise in final power distribution, we are addressing these demands to ensure fast, safe and reliable operations in AI data centers," said Andreas Weisl, Executive Vice President and Chief Sales Officer of Industrial & Infrastructure at Infineon.

SolarEdge states it is developing an 800 VDC powertrain intended to carry power from the medium-voltage grid connection through conversion, distribution, and protection to the compute rack.