Samsung Electronics and ASML (NASDAQ: ASML) announced an expansion of their strategic partnership, focusing on High NA extreme ultraviolet (EUV) lithography and advanced semiconductor manufacturing technologies.

As part of the agreement, Samsung plans to introduce ASML's High NA EUV lithography into future DRAM high-volume manufacturing by 2028, which the companies describe as a first for the industry. The technology is expected to extend the DRAM scaling roadmap through improved resolution, process simplification, and increased efficiency.

Samsung will also join an industry initiative to advance next-generation 12-inch photomask technology. The semiconductor industry has relied on a 6-inch photomask format for decades. The transition to 12-inch masks is expected to increase fab productivity, lower chipmaking costs, and remove stitching constraints for manufacturers using High NA EUV equipment. Samsung will work with industry partners to develop the required mask technologies and supporting infrastructure.

Young Hyun Jun, Vice Chairman and CEO of Samsung Electronics, said: "Samsung is committed to maintaining leadership in advanced semiconductor manufacturing, including memory and foundry, through breakthrough technologies and strong partnerships."

Christophe Fouquet, President and CEO of ASML, said: "Samsung has been one of ASML's most important innovation partners for many years. Together, we have helped advance the technologies that underpin modern semiconductor manufacturing."

The companies said they expect to continue exploring collaboration opportunities in advanced memory and innovative manufacturing approaches.