ASML Holding N.V. (Euronext: ASML, Nasdaq: ASML) and Taiwan Semiconductor Manufacturing Company (TWSE: 2330, NYSE: TSM) announced a collaborative initiative to transition the semiconductor industry to a larger-format 12-inch Extreme Ultraviolet (EUV) lithography photomask, according to a press release.

The two companies established the industry-wide initiative on September 7, ahead of the annual SPIE BACUS Conference in Monterey, California. The effort aims to establish a 12-inch mask pilot line by 2031, with 12-inch High NA EUV lithography systems targeted to enter advanced node production by 2033.

Currently, High NA EUV is adopted using 6-inch masks. The move to 12-inch masks is expected to increase fab productivity, lower chipmaking costs, and remove stitching constraints.

TSMC intends to use ASML's High NA technology in high-volume manufacturing for advanced nodes starting in 2030. The company expects the number of chip layers requiring High NA EUV to increase as technology nodes advance, driven by transistor architectures required for AI applications.

"We expect the adoption of High NA EUV to increase progressively along the device scaling roadmap, first using current 6-inch masks and then further supported by 12-inch masks," said Christophe Fouquet, president and CEO of ASML.

TSMC Chairman and CEO Dr. C.C. Wei said the initiative reflects the value of industry-wide collaboration. "By bringing together expertise from across the industry's value chain, we hope to keep providing the benefits of cutting-edge technology through continuous innovation," he said.

The announcement drew participation from major ecosystem partners and suppliers, who expressed interest in the transition to larger photomasks.