Navitas Semiconductor (NASDAQ: NVTS) announced that first shipments of its 5th Generation GaNFast gallium nitride technology, manufactured in partnership with GlobalFoundries, are scheduled to begin in September at GlobalFoundries' 200mm GaN-on-silicon facility in Burlington, Vermont.

The two companies announced their long-term strategic partnership in November 2025. Navitas developed its Gen 5 GaNFast field-effect transistors (FETs) and power integrated circuits for production at the Vermont facility.

The initial product family is expected to include 650-volt GaN FETs with RDS(ON) values of 11mΩ, 18mΩ, 50mΩ, 120mΩ, and 150mΩ. According to the companies, first wafers are scheduled to ship in September, internal samples in October, and strategic customer samples before the end of the year.

"Together with GlobalFoundries, we have established a trusted US-domestic manufacturing source for our GaNFast Gen 5 and future generations, which will play a critical role in powering AI infrastructure and high-performance computing while strengthening the resilience of the U.S. semiconductor ecosystem," said Chris Allexandre, President and CEO of Navitas.

Kannan Soundarapandian, senior vice president of GlobalFoundries' power business, said the first shipment "demonstrates how GF and Navitas are turning advanced GaN innovation into a secure, scalable domestic supply."

Navitas states it holds more than 300 issued and pending patents across GaN and silicon carbide technologies. The company said the Gen 5 products are intended for use in AI infrastructure, high-performance computing, industrial electrification, and national security applications. The information is based on a company press release.