Navitas Semiconductor stock surges 20% on U.S. defense contract

Investing.com -- Navitas Semiconductor (NASDAQ: NVTS) shares rose 20% in after-hours trading Monday following the announcement that the U.S. Government selected the company to develop next-generation 10 kV silicon carbide power semiconductors.

The U.S. Army awarded Navitas the ALATTIS (Accelerated, Large-Area, 10 kV SiC IGBT) program after a competitive evaluation. The Army selected Navitas from among leading U.S. silicon carbide technology companies based on its ultra-high-voltage SiC innovation and U.S.-anchored manufacturing capabilities.

The ALATTIS prototype project will develop and validate a domestic manufacturing process for ultra-high-voltage silicon carbide power semiconductor devices through design, fabrication, and testing. The project is sponsored by the Army Research Laboratory, which operates under the U.S. Army Combat Capabilities Development Command.

The program aims to develop 10 kV SiC insulated-gate bipolar transistors and associated PiN diode technologies for mission-critical systems used by the Armed Forces. ALATTIS is supported by the Joint Experimentation and Technology Accelerator to advance high-power electronics for defense and infrastructure applications.

Navitas’ GeneSiC SiC power semiconductor portfolio spans voltage ratings from 650 V to 6.5 kV and is manufactured through a U.S.-anchored supply chain. The company has pioneered several industry developments in ultra-high-voltage SiC, including 6.5 kV SiC thyristors in 2010, 10-15 kV PiN diodes in 2012, and 6.5 kV SiC MOSFETs in 2021.

Siddarth Sundaresan, SVP and Chief Technology Officer at Navitas, said the award "marks a significant milestone in advancing ultra-high-voltage silicon carbide (SiC) power devices and recognizes Navitas’ over 20 years of innovation in delivering reliable, ultra-high-voltage, high-power SiC technologies."

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